The electrical resistivity in Al-W amorphous alloys (CROSBI ID 82759)
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Ivkov, Jovica ; Radić, Nikola
engleski
The electrical resistivity in Al-W amorphous alloys
The amorphous Al(100-x)W(x) (x= 20, 22, 28 and 33) thin films have been prepared by co-deposition magnetron sputtering. The electrical resistivity of these alloys has been measured from room temperature down to liquid nitrogen temperature and for one Al78W22 sample down to 1.5 K. The resistivity of two Al78W22 samples has been measured up to 1000 K. The temperature dependence of the resistivity of the amorphous Al-W alloys in the temperature range from 77 K (20 K for x=22) to 293 K can be well interpreted in terms of the weak localisation of the electrons. The measurement on the Al78W22 alloy down to 1.5 k yields that it is superconducting below 1.8 K. At temperatures higher than room temperature the resistivity of measured Al78W22 samples strongly and irreversibly depends on the heat treatment. After annealing the samples slightly below their crystallisation temperature (550 degC) the dependence of the resistivity on temperature becomes reversible and follows the low temperature behaviour. The low and high temperature behaviour observed in Al78W22 alloy probably holds qualitatively for the other amorphous Al-W alloys.
Disordered systems; electronic transport
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