engleski

Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect

The observed improvement of BVCEO and fTxBVCEO product of Horizontal Current Bipolar Transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximum electric field in the intrinsic transistor. A simple model is developed to physicaly explain improvement of the breakdown voltage. An optimization of HCBT structure with respect to the BVCEO and fTxBVCEO product is given by the simulation. BVCEO is increased by 23.6% while fT is reduced only by 6.3%, resulting in higher fTxBVCEO product.

charge sharing; impact ionization; breakdown voltages; cut off frequency; HCBT

nije evidentirano