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Statistics of the Mg acceptor in GaN in the band model

The discrete energy level is not appropriate for the free hole statistics of the heavy Mg-doping of GaN. The band model assumes the broad acceptor band centered at 0.20 eV above the valence zone. Its half-width is proportional to the Mg-concentration, while the center of the band remains unaltered. As a consequence, the ionization energy can vary with the compensation, which is not observed under the assumption of the discrete level. The model can explain the Hall constant data and is also in accordance with the photo-luminescence spectra. It can also tentatively explain the wide spreading of the ionization energies in the literature.

GaN; semiconductors; doping; statistics; Mg;

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