InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror (CROSBI ID 120792)
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Podaci o odgovornosti
Dorsaz, J. ; Carlin, J. F. ; Zellweger, C. M. ; Gradečak, S. ; Ilegems, M.
engleski
InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A1-xInxN layers with an Al content around x 0.17 are lattice matched to GaN, thus avoiding strain-related issues in the subsequent active layers while keeping a high refractive index contrast of 7%, comparable to that achievable in the Al0.5Ga0.5N/GaN system. Devices exhibit clear resonant-cavity effects, improved directionality in the radiation pattern and achieve an optical output of 1.7 mW and 2.6% external quantum efficiency at 20 mA.
GaN ; Bragg refectors ; MOCVD ; light emitting diodes
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Podaci o izdanju
201 (12)
2004.
2675-2678
objavljeno
0031-8965
1521-396X
10.1002/pssa.200405042