engleski

Bending of dislocations in GaN during epitaxial lateral overgrowth

Bending of dislocations in GaN during epitaxial lateral overgrowth (ELO) has been experimentally studied using transmission electron microscopy. The orientational dependence of the dislocation energy factor K has been calculated on the basis of anisotropic elasticity theory for different types of perfect dislocation in GaN. Image forces act on dislocations during the growth and dislocations bend to achieve the minimum energy. Bending behavior depends on a dislocation type and we show that the measured bending angles correspond to the calculated energy minima. The results allow us to quantitatively discuss the most advantageous ELO GaN mask direction for the largest dislocation density reduction.

GaN; dislocations; ELO; electron microscopy

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