engleski

Enhanced diffusion of Cu in aluminium under low-energy ion bombardment

Sputter deposition of cupper on aluminium, under bombardment of low-energy ions resulted in the formation of two interfacial zones. The mean diffusion coefficient effective in the formation of the first zone, ≤ 3 x 10-10 cm2/s, is attributed to vacancy supersaturation. The results strongly suggest that by supplying the necessary energy for the formation of vacancies, the activation energy for diffusion can be reduced to the level of the enthalpy of migration, provided lifetimes of freely migration defects are sufficiently long.

plasma-material interactions; boundary layer effects; diffusion; interface formation

nije evidentirano