GISAXS STUDY OF Si NANOCRYSTALS FORMATION IN SIO2 THIN FILMS (CROSBI ID 510626)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid
engleski
GISAXS STUDY OF Si NANOCRYSTALS FORMATION IN SIO2 THIN FILMS
We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100 °C for 1h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained.
Si nanocrystals; GISAXS
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
133-133-x.
2005.
objavljeno
Podaci o matičnoj publikaciji
ICTF13/ACSIN8 Abstract Book
Karlsson, Ulf
Stockholm: Swedish Vacuum Society
Podaci o skupu
13th International Congress on Thin Films/ 8th International Conference on Atomically Clean Surfaces, Interfaces and Nanostructures
poster
19.06.2005-23.06.2005
Stockholm, Švedska