Growth of Ge islands on Si substrates (CROSBI ID 510621)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid
engleski
Growth of Ge islands on Si substrates
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy. Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high-vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650°C. At this temperature islands grow in conical shape with very similar dimensions, however, inter-island distances varied significantly.
Ge islands; self-organization
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Podaci o prilogu
57-57-x.
2005.
objavljeno
Podaci o matičnoj publikaciji
ICTF13/ACSIN8 Abstract Book
Karlsson, Ulf
Stockholm: Swedish vacuum Society
Podaci o skupu
13th INternational Congress on Thin Films/ 8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
poster
19.06.2005-23.06.2005
Stockholm, Švedska