Self-organized growth of Ge islands on Si(100) substrates (CROSBI ID 510593)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid ; Slaoui, A.
engleski
Self-organized growth of Ge islands on Si(100) substrates
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Grazing incidence small angle X-ray scattering (GISAXS) as one of the nondestructive techniques is a powerful technique for structural characterization of islands supported on a substrate. From the GISAXS pattern it is possible to determine the size, the shape, inter-island distance and size distribution of islands. Samples were prepared by with two different techniques, namely, high-vacuum evaporation of a 5nm 10nm thick Ge layer on Si(100) substrate held at 200 °C. The samples were annealed at 700 °C for 1h in vacuum, yielding to island formation.
Ge islands; self-organization
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Podaci o prilogu
F-5/21-x.
2005.
objavljeno
Podaci o matičnoj publikaciji
E-MRS 2005 Spring Meeting Scientific Programme
Slaoui, Abdelilah ; Barbier, Daniel ; Crean, Gabriel ; Martins, Rodrigo ; Habermeier, Hans-Ulrich
Strasbourg: European Materials Research Society
Podaci o skupu
E-MRS 2005 Spring Meeting
poster
31.05.2005-03.06.2005
Strasbourg, Francuska