Magnetron sputtering growth of Ge islands on Si(100) substrates (CROSBI ID 510572)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid
engleski
Magnetron sputtering growth of Ge islands on Si(100) substrates
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy. Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high-vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650°C. At this temperature islands grow in conical shape with very similar dimensions, however, inter-island distances varied significantly.
Magnetron; sputtering; Ge islands
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Podaci o prilogu
91-93-x.
2005.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO 2005, Vol 1
Podor, Balint, Horvath, Zsolt J., Basa Peter
Budimpešta: Hungarian Academy of Sciences (MTA)
Podaci o skupu
First International Workshop on Semiconductor Nanocrystals : SEMINANO 2005
poster
10.09.2005-12.09.2005
Budimpešta, Mađarska