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Pregled bibliografske jedinice broj: 210936

Comparison of Hetero and Mono FET and BT Structures


Očevčić, Hrvoje; Švedek, Tomislav
Comparison of Hetero and Mono FET and BT Structures // 7th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services
Niš, Srbija i Crna Gora, 2005. str. 597 - 600 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
Comparison of Hetero and Mono FET and BT Structures

Autori
Očevčić, Hrvoje ; Švedek, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
7th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services / - , 2005, 597 - 600

Skup
TELSIKS 2005

Mjesto i datum
Niš, Srbija i Crna Gora, 28-30.09.2005

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
heterostrukture; FET; BT; GaAs
(heterostructures; FET; BT; GaAs)

Sažetak
The properties of hetero and mono FET and BT devices are reviewed and discussed in the context of their suitability for high frequency and noise. GaAs based devices have a defined place in commercial and many more applications. The Heterojunction Bipolar Transistor (HBT) basically is a modified bipolar transistor. The emitter and base layers are formed with different bandgap material. The emitter having the wider band gap, thus the emitter delivers a barrier against the hole injection into the base. HBT technology has become a major player in wireless communication, power amplifier, mixer, and frequency synthesizer applications. HBTs extend the advantages of silicon bipolar transistors to significantly higher frequencies. The HEMT delivers the lowest noise figure with a high gain performance. This high gain in some cases is a disadvantage for problem free volume applications in low frequency range.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
0165112 - Digitalna radiodifuzija u frekvencijskim opsezima ispod 30 MHz (Švedek, Tomislav, MZOS ) ( POIROT)

Ustanove:
Fakultet elektrotehnike, računarstva i informacijskih tehnologija Osijek

Profili:

Avatar Url Tomislav Švedek (autor)

Citiraj ovu publikaciju

Očevčić, Hrvoje; Švedek, Tomislav
Comparison of Hetero and Mono FET and BT Structures // 7th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services
Niš, Srbija i Crna Gora, 2005. str. 597 - 600 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Očevčić, H. & Švedek, T. (2005) Comparison of Hetero and Mono FET and BT Structures. U: 7th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services.
@article{article, year = {2005}, pages = {597 - 600}, keywords = {heterostructures, FET, BT, GaAs}, title = {Comparison of Hetero and Mono FET and BT Structures}, keyword = {heterostructures, FET, BT, GaAs}, publisherplace = {Ni\v{s}, Srbija i Crna Gora} }




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