Study of ion induced damage in 4H-SiC (CROSBI ID 115696)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Lo Giudice, A. ; Olivero, P. ; Fizzotti, F. ; Manfredotti, C. ; Vittone, E. ; Bianco, S. ; Bertuccio, G. ; Casiraghi, R. ; Jakšić, Milko
engleski
Study of ion induced damage in 4H-SiC
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.
4H silicon carbide ; ion beam induced charge collection ; radiation damage
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Podaci o izdanju
483
2005.
389-392
objavljeno
0255-5476
1662-9752
10.4028/www.scientific.net/MSF.483-485.389