Defects production in gamma irradiated silicon at different temperatures (CROSBI ID 115652)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Kovačević, Ivana ; Pivac, Branko
engleski
Defects production in gamma irradiated silicon at different temperatures
A deep level transient spectroscopy (DLTS) study of electrically active defects in g-irradiated, n-type, Czochralski grown silicon samples at different temperatures has been performed. It is shown that upon irradiation at low temperatures the migration of primary defects is very limited, resulting in formation of only vacancy-oxygen (VO) centres. At higher temperatures these centres continue to form but the profile of the peak suggests that complex clustering of primary defects around VO centres occurs, contributing to the stress in material. After irradiation at higher temperatures the vacancies become more mobile contributing to the formation of multivacancy-related defects. Besides formation of divacancies, a deep level at Ec-0.32 eV has been detected in the DLTS spectra. This level is identified as a divacancy-oxygen V2O complex.
silicon ; defects ; irradiation ; dlts
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano