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Pregled bibliografske jedinice broj: 203792

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2


Desnica, Uroš; Dubček, Pavo; Salamon, Krešimir; Desnica-Franković, Ida-Dunja; Buljan, Maja; Bernstorff, Sigrid; Serincan, U.; Turan, Rasit
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 // Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 238 (2005), 1-4; 272-275 (međunarodna recenzija, članak, znanstveni)


Naslov
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Autori
Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit

Izvornik
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms (0168-583X) 238 (2005), 1-4; 272-275

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge

Sažetak
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge- implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta=1000oC. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
0035012
0098020

Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus