The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 (CROSBI ID 115577)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit
engleski
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge- implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta=1000oC. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing
nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge
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Podaci o izdanju
238 (1-4)
2005.
272-275-x
objavljeno
0168-583X