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izvor podataka: crosbi

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 (CROSBI ID 115577)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 238 (2005), 1-4; 272-275-x

Podaci o odgovornosti

Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit

engleski

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge- implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta=1000oC. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing

nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge

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Podaci o izdanju

238 (1-4)

2005.

272-275-x

objavljeno

0168-583X

Povezanost rada

Fizika

Indeksiranost