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Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

CdSe quantum dots (QDs) were synthesized by ion-implanting constituent atoms in SiO2, thermally grown on Si-wafer. The influence of implantation and post-implantation treatment parameters was studied by grazing incidence small angle scattering of X-rays (GISAXS). The effect of stoichiometry deviations was analyzed for various Cd:Se ratios in the range of 0.75 to 1.95. The best correlated ensemble of QDs in implanted layer was found for 1.33 and 1.1 Cd:Se ratios, and 30 s post-implant annealing at 700 oC. These findings were related with the amount of well-crystallized CdSe QDs, as found by Raman scattering.

nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; CdSe

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