engleski

Structure of ion beam synthesized II-VI nanocrystals

Structure of semiconductor compounds directly synthesized by ion implantation of large and equal doses of constituent atoms into the SiO2 substrate has been studied using grazing incidence small angle X-ray scattering (GISAXS). GISAXS data suggest the successful synthesis of CdS, CdTe and PbTe nanoparticles already during the process of ion implantation either at 300 K or at 77 K, while subsequent annealing at high temperature (up to 1273 K) results in the increase of nanoparticle size and of the fraction of fused atoms. Aparently a considerable fraction of implanted atoms synthesize into semiconductor clusters already during low-T implantation, although as amorphous aggregates. Upon annealingthese aggregates increase in size and transform into crystalline phase.

Small Angle Scattering; II-VI semiconductors; nanocrystals

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