engleski

Influence of light impurities on dislocation-related deep levels in p-type silicon

Influence of light impurities on dislocation related deep levels in p-type silicon (FZ and EFG grown) has been investigated by infrared spectroscopy (IR) and deep level transient spectroscopy (DLTS). It is known that light impurites segregate at structural defects such as dislocations but it is still unclear what are the macroscopic effects, do light impurities electrically activate structural defects and can the role of carbon be distinguished? In this work we have shown that dislocations are effective traps for Si, carbon presence influences dislocation deep levels and that thermal treatment even at very low temperatures affects dislocations activity.

silicon; point defects; irradiation; DLTS

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