engleski

Self-organized growth of Ge islands on Si(100) substrates

We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscope (AFM). Grazing incidence small angle X-ray scattering (GISAXS) as one of the nondestructive techniques is a powerful technique for structural characterization of islands supported on a substrate. From the GISAXS pattern it is possible to determine the size and shape of islands. Samples were prepared by a high-vacuum evaporation of a 10nm thick Ge layer on Si(100) substrate held at 200 °C. The samples were annealed for 1h in vacuum at different temperatures, yielding to island formation.

silicon; germanium; nanostructures

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