engleski

Dimethylhydrazine: a potential competitor for ammonia for the growth of GaInN structures?

The growth of GaInN quantum wells (QWs) with high In− content is still a difficult issue due mainly to the very different physical properties of GaN and InN. At the typical GaN growth temperatures, no InN incorporation can be expected due to the high volatility of the In atoms. On the other hand, the cracking of the commonly used group V precursor, ammonia, is not efficient enough at lower temperatures, requiring V/III− ratios greater than 10.000 to ensure a good optical quality and increasing drastically the amount of waste material producing during the growth. Finding a new nitrogen precursor, which decomposes easily at lower temperatures, may simplify the growth of InN− containing structures. Such a precursor could be Dimethylhydrazine (DMHy), a liquid source releasing atomic nitrogen at temperatures between 320 and 800°C.

GaInN; quantum wells; Dimethylhydrazine

Proceeding objavljen kao KNJIGA ISBN: 88-8305-007-X