engleski

A New HCBT with a Partially Etched Collector

A novel Horizontal Current Bipolar Transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p^+ extrinsic base from TMAH etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (f_T ) of 30.4 GHz, the maximum frequency of oscillations (f_max ) of 35 GHz and the collector-emitter breakdown voltage (BV_CEO ) of 4.2 V, which are the highest f_T and the highest f_T BV_CEO product among the Lateral Bipolar Transistors (LBTs).

BiCMOS integrated circuits; Bipolar transistors; CVD; Microwave measurements; Semiconductor device ion implantation; Silicon on insulator technology

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