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Effects of Light Soaking on Amorphous Silicon Thin Films (CROSBI ID 505260)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan Effects of Light Soaking on Amorphous Silicon Thin Films // Proceedings of 19th European Photovoltaic Solar Energy Conference / Bal, J.-L. ; Silvestrini, G. ; Grassi, A. et al. (ur.). München: WIP-Munich, Sylveinsteinstr. 2, D-81369 Muenchen, 2004, 2004. str. 1530-1532-x

Podaci o odgovornosti

Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan

engleski

Effects of Light Soaking on Amorphous Silicon Thin Films

The effect of light soaking on a-Si:H films is well known as the Staebler-Wronski effect, though its complete mechanism is not yet clear. The effect of light soaking with UV light on defects creating deep levels influence of hydrogen presence on such defects in intrinsic a-Si:H films was studied. The defects were investigated by current deep level transient spectroscopy (I-DLTS) and infrared spectroscopy (IR) measurements. It is found that UV light caused minor Si-H bond-breaking and hydrogen redistribution affects present oxygen.

a-Si; defects; light-soaking

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Podaci o prilogu

1530-1532-x.

2004.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of 19th European Photovoltaic Solar Energy Conference

Bal, J.-L. ; Silvestrini, G. ; Grassi, A. ; Palz, W. ; Vigotti, R. ; Gamberale, M. ; Helm, P.

München: WIP-Munich, Sylveinsteinstr. 2, D-81369 Muenchen, 2004

Podaci o skupu

19th European Photovoltaic Solar Energy Conference

poster

07.06.2004-11.06.2004

Pariz, Francuska

Povezanost rada

Fizika