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Structural and electronic properties of vanadium ultra-thin films on Cu(100)

The growth mode, structural and electronic properties of vanadium ultra-thin films deposited on Cu(100) at room temperature were studied by means of Auger electron spectroscopy, low energy electron diffraction and angular-resolved photoemlsslon The results of all measurements are consistent with a plctm'e of slmultaneous multdayer growth of vanadium showing bcc-(110) structure The normal emission UP spectra of the valence band region show a systematic increase of the intensity at the Fermi level with the increasing vanadium concentration on the copper surface There are two mechanisms which can account for this intensity. In the limit of very small vanadium concentration, a vanadium virtual bound state is probably a dominant contribution At higher concentration, the quasl-3D-(110)-like structure is formed and the transition from the El band, lying just below the Fermi level, is the dominant process contributing to the intensity at the Fermi level. Thermal stablhty of vanadium films and the copper segregation were also studied.

Angular-resolved photoemlsslon spectroscopy (ARUPS); Copper; Ultra-thin films; Vanadmm

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