engleski

GISAXS and AFM study of Germanium islands on silicon

Germanium islands, were formed on (100) oriented single-crystal silicon sub-strates by subsequent annealing of the evaporated film, and by magnetron sputtering of Ge on the substrate held at elevated temperatures. The struc-tures formed by these processes have been studied by grazing incidence small angle X-ray scattering (GISAXS) and by atomic force microscopy (AFM). A series of samples, annealed isothermally for different periods of time have been prepared and the island growth dynamics has been studied. Particle like scattering is evident already in as prepared sample though imbedded in the dominant thin film signal. The annealing leads first to the film re-laxation and ordering, as evidenced by the enhancement of the fringes for the shorter annealing times. The prolonged annealing affects first the upper surface roughness, and finally leads to the full particles formation. The mor-phology of the particles was analyzed by AFM and compared to the results obtained by GISAXS analysis.

Ge/Si; GISAXS; AFM

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