Effects of Light Soaking on Amorphous Silicon Thin Films (CROSBI ID 501439)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan
engleski
Effects of Light Soaking on Amorphous Silicon Thin Films
The effect of light soaking on a-Si:H films is well known as the Staebler-Wronski effect, though its complete mechanism is not yet clear. The effect of light soaking with UV light on defects creating deep levels influence of hydrogen presence on such defects in intrinsic a-Si:H films was studied. The defects were investigated by current deep level transient spectroscopy (I-DLTS) and infrared spectroscopy (IR) measurements. It is found that UV light caused minor Si-H bond-breaking and hydrogen redistribution affects present oxygen.
a-Si; Defects; Light-Soaking
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Podaci o prilogu
2004.
objavljeno
Podaci o matičnoj publikaciji
19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Palais des Congres, Paris, France
J.-L.Bal, G.Silvestrini, A.Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm
München: WIP-Munich, Sylveinsteinstr. 2, D-81369 München
Podaci o skupu
19th European Photovoltaic Solar Energy Conference
poster
07.06.2004-11.06.2004
Pariz, Francuska
