engleski

Temperature dependent defect production in gamma-irradiated silicon

A deep level transient spectroscopy (DLTS) study of electrically active defects in gamma-irradiated, n-type, Czochralski-grown silicon samples at different temperatures has been performed. It is shown that upon irradiation at low temperatures the migration of primary defects is very limited, resulting in formation of only VO centers. At higher temperatures these centers continue to form but the profile of the peak suggests that complex clustering of primary defects around VO centers occurs, contributing to the stress in material. After irradiation at higher temperatures a vacancies become more mobile contributing to the formation of multivacancy-related defects. Besides formation of divacancies, a deep level at Ec – 0.32 eV has been detected in DLTS spectra. This level is identified as divacancy-oxygen V2O complex.

silicon; defects; deep level transient spectroscopy; radiation

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