Characterization of Ge islands on Si (100) substrates (CROSBI ID 501252)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Kovačević, Ivana ; Dubček, Pavo ; Zorc, Hrvoje ; Radić, Nikola ; Pivac, Branko ; Bernstorff, Sigrid
engleski
Characterization of Ge islands on Si (100) substrates
We present a preliminary study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Samples were prepared by a high-vacuum evaporation of a 5nm thick Ge layer on Si(100) substrate held at 200  C. The samples were subsequently annealed at different temperatures for 1h in vacuum, yielding to island formation. A Fortran program IsGISAXS was used for the simulation and analysis of Ge islands. Vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. Obtained parameters were used for the simulations. The simulated 2D GISAXS pattern well reproduce experimental data for cylindrically shaped islands with morphological parameters R=4 nm, H/R= 0.25 and the average inter-island distance D=5 nm.
silicon; germanium; nanostructures;
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nije evidentirano
nije evidentirano
nije evidentirano
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Podaci o prilogu
25-x.
2004.
objavljeno
Podaci o matičnoj publikaciji
Podaci o skupu
10th Joint Vacuum Conference
predavanje
28.09.2004-02.10.2004
Portorož, Slovenija