engleski

Radiation damage microstructures in silicon and applications in charged particle detection

Development of the digital signal processing introduces ability to recognize a small variation of pulse shapes from the preamplifier connected to semiconductor radiation detectors. Pulse shape is determined by the charge collection properties (mobility, lifetime of charge carriers and electric field) of detection device, as well as the nature of interaction between radiation and detector material. By using MeV ions of different range (z), damaged regions in semiconductor detector may be created at selected positions (xy). In such a way, charge collection properties and therefore the response of the detector will be different in respect to its undamaged part. Different structures of the damaged regions can be produced with correlation of pulse shape and range or position of detected charged particles. Radiation damage is easily created at the certain depth and position using focused ion beam of desired energy and range using nuclear microprobe facility. Such process can be simultaneously controlled, performing on line TRIBIC (Time resolved ion beam induced charge) measurements. In this work we present application possibilities of the different 3D radiation damage structures created in a simple silicon pin diodes. Some of them may be the basis for the development of new and simple position (range) sensitive detectors.

focused ion beam; TRIBIC

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