The Analysis of Horizontal Current Bipolar Transistor (HCBT): A Novel Silicon Bipolar Device (CROSBI ID 467122)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Suligoj, Tomislav ; Biljanović, Petar
engleski
The Analysis of Horizontal Current Bipolar Transistor (HCBT): A Novel Silicon Bipolar Device
A new concept of silicon bipolar transistor technology is proposed. The resulting horizontal current bipolar transistor (HCBT) was simulated assuming the 1 um technology. The surface of the device is at least one order magnitude smaller than conventional SST devices with the same emitter area. The same doping profile as in known vertical current devices is achieved by simpler technology using single polysilicon layer, without conventional epitaxial and n+ buried layers and with reduced number of lithography masks and technological steps. The electrical analysis of HCBT results in maximum small current gain of 158, and maximum cutoff frequency of 16 GHz at Uce=3 V.
horizontal current; bipolar transistor; fabrication process; electrical parameters
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Podaci o prilogu
367-371-x.
1998.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of MELECON ´98, Vol. I
Baal-Schem, Jacob
Tel Aviv: Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
MELECON ´98 - 9th Mediterranean Electrotechnical Conference
predavanje
18.05.1998-20.05.1998
Tel Aviv, Izrael