engleski

IBIC and IBIL microscopy applied to advanced semiconductor materials

A new version of the classical IBIC technique is presented together with a comparison between IBIC and IBIL microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In some cases (Si, CdTe) the method is used to profile the electrical field in the bulk of the sample, in other cases (GaAs, CVD diamond) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, mpas of the IBIL/IBIC ratio could be used in order to obtain maps of radiative recombination centers.

Cvd diamond; nuclear

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