The Influence of Temperature on Lifetime (CROSBI ID 467105)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Divković-Pukšec, Julijana
engleski
The Influence of Temperature on Lifetime
Recombination by the means of a deep center determines the lifetime of electrons and holes. Recombination process depends, mostly, on a recombination center; its density and capturing capability. In this work the influence of temperature on capture coefficients of gold (as deep recombination center in silicon) is considered. The lifetime of a hole in an n-type silicon is calculated. Only one energy level of gold is examined, Shockley-Read-Hall, as well as, Auger recombinations are taken into account. Calculated lifetimes are compared with experimentally obtained values. On the basis of this comparison it can be concluded that capture coefficients of a deep recombination center depend on temperature; temperature dependence on a capture cross section, *, can be described as *T -2.
recombination center; gold; deep energy level; lifetime; capture coefficient
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Podaci o prilogu
349-353-x.
1998.
objavljeno
Podaci o matičnoj publikaciji
Baal-Schem, Jacob
Tel Aviv: Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
MELECON ´98 - 9th Mediterranean Electrotechnical Conference
predavanje
18.05.1998-20.05.1998
Tel Aviv, Izrael