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Thermally Stimulated Currents Measurements on Semi-Insulating GaN Thin Films

Thermally Stimulated Currents Measurements (TSC) was used in the study of deep levels in semi-insulating GaN thin film samples, grown on sapphire by the molecular beam epitaxy. Prior to the standard TSC measurements samples were subjected to "thermal cleaning procedure" at certain temperatures in 98 - 250 K range. So obtained TSC spectra were all successfully fitted by the Simultaneous multiple peak analysis method (SIMPA), using the same set of deep levels with activation energies between 0.09 and 0.60 eV, differing only in relative concentrations.

Thermally stimulated currents; GaN; thin film

Vacuum (0042-207X) ; 80 (1/3) (2005), 1-2