engleski

Study of structural changes in Krypton implanted silicon

The structural changes induced in single crystal silicon implanted with Krypton above the amorphisation threshold were studied by X-ray reflectivity together with grazing incidence small angle X-ray scattering technique. Silicon samples were implanted with Krypton with two different ion energies. A well-defined layer of amorphous silicon, 220 nm thick, rich in Krypton, was detected below the top, less disturbed layer. The studied series of samples consists of as-implanted, relaxed, and several samples with increased level of defects induced by additional Kr implantation. Additional implantation caused changes in layers structure and thickness, which was well evidenced in X-ray reflectivity, while only minor changes of surface roughness and critical angle were detected in GISAXS spectra.

silicon; Krypton; ion implantation; SAXS; grazing incidence

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