engleski

Temperature-Dependent Defect Production in  -irradiated Silicon

We present a study on defect sates occurring in n-type (100) Czochralski-grown silicon after a  -irradiation on different temperatures. Deep level transient spectroscopy (DLTS) measurements were used to identify the electrical active defects. We have observed a strong decrease in concentration of VO center after a high-temperature irradiation. This may be due to the production of oxygen dimers

silicon; defects; irradiation

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