engleski

Analysis of the nano-structural properties of thin film silicon-carbon alloys

Amorphous hydrogenated silicon-carbon thin films with high hydrogen content (20-40 at%) and carbon to silicon ratio between 0.2 and 0.4, were deposited by sputtering of silicon target in gas mixture containing hydrogen and carbon atoms. The samples were heated up to 10500C in order to form crystal-like structures. The structural ordering on atom level was estimated by FTIR (Fourier Transform Infrared) and Raman spectroscopy while the homogeneity on nano-scale was examined by GISAXS (Grazing Incidence Small Angle X-ray Scattering), performed on ELETTRA synchrotron radiation source, Trieste (Italy). Results of GISAXS spectra of all of measured specimens indicate presence of "particles" in the "bulk" of the films, with size distribution between 0.8 and 1.5 nm and mean values variation between 2.8 and 4.8 nm. By comparison with results of vibratonal spectroscopy, the "particles" in amorphous phase was identified as voids agglomerates while in annealed samples they are most probably nano-crystals of SiC.

amorphous silicon carbide ; nano-structure ; GISAXS ; FTIR ; Raman

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