engleski

Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution

In order to improve a high-frequency performance and to increase the driving current of bipolar transistors, the collector doping concentration has to be increased, which degrades the breakdown voltages. The observed improvement of BVCEO and fT BVCEO product of Horizontal Current Bipolar Transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. Electrical characteristics of the HCBT structure are simulated. It is shown that BVCEO is increased by 23.6 % while fT is reduced only by 5.7 % resulting in higher fT BVCEO product. A simple model is developed to physically explain charge sharing effect and improvement of the breakdown voltage.

bipolar transistor; collector doping; horizontal current; BVCE0; charge sharing

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