A Novel Low-cost Horizontal Current Bipolar Transistor (HCBT) with the Reduced Parasitics (CROSBI ID 497820)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Suligoj, Tomislav ; Biljanovic, Petar ; Sin, Johnny K.O. ; Wang, Kang L.
engleski
A Novel Low-cost Horizontal Current Bipolar Transistor (HCBT) with the Reduced Parasitics
A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalls on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and fTBVCEO product (127.7 GHzV) among the lateral bipolar transistors.
Horizontal Current Bipolar Transistor; lateral bipolar transistor; BiCMOS; pillar-like MOSFET; parasitics reduction
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Podaci o prilogu
36-39-x.
2004.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
IEEE Bipolar / BiCMOS Circuits and Technology Meeting
predavanje
13.09.2004-14.09.2004
Montréal, Kanada
