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Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling


Desnica, Uroš; Desnica-Franković, Dunja Ida; Ivanda, Mile; Furić, Krešimir; Haynes, T. E.
Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling // Physical Review B - Condensed Matter, 55 (1997), 24; 16205-16216 (međunarodna recenzija, članak, znanstveni)


Naslov
Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling

Autori
Desnica, Uroš ; Desnica-Franković, Dunja Ida ; Ivanda, Mile ; Furić, Krešimir ; Haynes, T. E.

Izvornik
Physical Review B - Condensed Matter (0163-1829) 55 (1997), 24; 16205-16216

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Implantation-induced disorder; GaAs; Raman spectroscopy; ion channeling

Sažetak
Disorder was introduced into GaAs by implantation of 30Si+ ions, using a very wide range of ion doses, dose rates, and implant temperatures, and studied by Raman scattering (RS) and Rutherford backscattering ion channeling (RBS). RS spectra were deconvoluted consistently and systematically into up to four components, one of them being an apparent background signal interpreted here as a boson peak. Arguments are given that this signal represents the second amorphous phase different from a continuous random network. An intercascade distance model (ICD) was postulated, which estimates the average distance, LICD, between implantation induced cascades as a function of ion dose. An analogous parameter, LRBS, was calculated from the RBS damage fraction fRBS. From RS data the correlation length LRS, representing the size of crystalline regions with preserved translational symmetry, was determined by fitting the LO signal within the spatial correlation model. All three L's agree nicely, proving the equivalency of the correlation length and intercascade distance. This enabled a straightforward comparison of relevant signals and a direct correlation between RS and RBS. While measure of damage in RBS (fRBS) reflects the disordered volume fraction of the implanted layer, RS measures simultaneously the lowering of the translational symmetry (an effect that prevails at lower doses) and the fraction of disordered volume (prevailing at higher doses). A considerable difference in sensitivity between RS and RBS to particular defects enabled the differentiation of six different types of implantation-introduced disorder (53 References).

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00980301
00980303

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus