engleski

Improvement of fT vs BVCEO Trade-off by Extrinsic Base Design Optimization

In modern bipolar transistors design, high speed and driving current are desired. To meet that requirements, collector doping has to be increased which results in low breakdown voltages, specially BVCEO. This work shows that fT vs BVCEO trade-off can be improved by optimization of the extrinsic base geometry. Results are verified by the simulation of the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics. For structure with extrinsic base depth of 0.25 *m, BVCEO is improved by 23.6 % while fT is decreased by only 5.6 % when extrinsic base width increases from 0.2 to 0.5 *m. *=micro.

bipolar transistor; collector doping; extrinsic base

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