Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution (CROSBI ID 496793)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Koričić, Marko ; Biljanović, Petar ; Suligoj, Tomislav
engleski
Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution
In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic transistor and improves BVCEO. Extrinsic base can be optimized and higher breakdown voltage can be obtained without severely degrading high frequency performance. This was shown by the simulation of the Horizontal Current Bipolar Transistor electrical characteristics.
bipolar transistor; charge sharing; high frequency performance
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Podaci o prilogu
39-42-x.
2004.
objavljeno
Podaci o matičnoj publikaciji
Proceedings / MELECON 2004
Matijašević, Maja ; Pejčinović, Branimir ; Tomšić, Željko ; Butković, Željko
Zagreb: Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
The 12th IEEE Mediterranean Electrotechnical Conference
predavanje
12.05.2004-15.05.2004
Dubrovnik, Hrvatska