Napredna pretraga

Pregled bibliografske jedinice broj: 1491

Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing


Gamulin, Ozren; Ivanda, Mile; Desnica, Uroš; Furić, Krešimir
Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing // Journal of molecular structure, 410 (1997), 249-252 (međunarodna recenzija, članak, znanstveni)


Naslov
Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing

Autori
Gamulin, Ozren ; Ivanda, Mile ; Desnica, Uroš ; Furić, Krešimir

Izvornik
Journal of molecular structure (0022-2860) 410 (1997); 249-252

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon; annealing effects; Raman spectroscopy

Sažetak
Thermal and photo-induced annealing was performed on different samples of amorphous silicon. The structural changes were monitored by Raman spectroscopy by means of the frequency shift and change in width of the TO-like phonon band of a-Si. While thermal annealing leads to the expected increase of structural order with temperature, photo-induced annealing shows anomalous behaviour: an increase of disorder with light soaking. This effect is discussed in terms of structural rearrangements of atoms caused by photo-induced electronic transitions.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00980301
00980303

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus