engleski

Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy

The precise, rapid, and reliable quantitative evaluation of interstitial oxygen present in silicon wafers is technologically very important and has been extensively studied since the Seventies. Among several techniques commonly used for this purpose, infrared (IR) spectroscopy is widely accepted as the most sensitive and reliable, being contemporarily non destructive. Several problems, such as multiphonon silicon absorption and oxide precipitate contribution, however, often interfere with the interstitial oxygen IR signal making the analysis complex and dubious. This paper reviews recent advances in addressing this problem and illustrates a new method for quantifying and subtracting the spurious contributions.

infra-red spectroscopy; interstitial oxygen; silicon wafers; spurious data

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