engleski

A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

The new pillar-like structures, such as vertical memory cells and FinFETs [1] are introduced as the end-of-scaling devices for the improvement of the MOSFETs characteristics and for the reduction of the chip area consumption. Bipolar transistors are needed for the integration with those devices for the future mixed-signal system-on-a-chip applications. We develop a Horizontal Current Bipolar Transistor (HCBT) suitable for such an integration [2] since its active device region is processed in the n-hill sidewall. In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. In comparison with the existing Lateral Bipolar Transistors (LBTs) [3-5], the HCBT exhibits the highest fT and the highest fTBVCEO product reported in the literature so far.

FinFET; Horizontal Current Bipolar Transistor; Lateral Bipolar Transistor

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