engleski

Structural relaxation of amorphous silicon during thermal and cw laser annealing

Different amorphous silicon thin films were prepared by high energy ion bombardment of crystalline silicon (a-Si) and by magnetron sputtering deposition (a-Si:H and a-Si1− xCx:H). All samples were laser annealed and a-Si sample was thermally annealed. Structural changes were monitored by bandwidth and position of transverse optical (TO)-like vibrational band in Raman spectrum of amorphous silicon. They were compared with changes of broad background signal, recently interpreted as ‘ boson peak'. Correlation of structural and boson peak changes was explained by a fractal model.

amorphous silicon; boson peak; fractal model

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