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Structural relaxation of amorphous silicon during thermal and cw laser annealing


Gamulin, Ozren; Ivanda, Mile; Desnica, Uroš; Furić, Krešimir
Structural relaxation of amorphous silicon during thermal and cw laser annealing // Journal of non-crystalline solids, 230 (1998), B; 943-948 (međunarodna recenzija, članak, znanstveni)


Naslov
Structural relaxation of amorphous silicon during thermal and cw laser annealing

Autori
Gamulin, Ozren ; Ivanda, Mile ; Desnica, Uroš ; Furić, Krešimir

Izvornik
Journal of non-crystalline solids (0022-3093) 230 (1998), B; 943-948

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon; boson peak; fractal model

Sažetak
Different amorphous silicon thin films were prepared by high energy ion bombardment of crystalline silicon (a-Si) and by magnetron sputtering deposition (a-Si:H and a-Si1− xCx:H). All samples were laser annealed and a-Si sample was thermally annealed. Structural changes were monitored by bandwidth and position of transverse optical (TO)-like vibrational band in Raman spectrum of amorphous silicon. They were compared with changes of broad background signal, recently interpreted as ‘ boson peak'. Correlation of structural and boson peak changes was explained by a fractal model.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00980301
00980303

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus