engleski

Preparation and structure of AlW thin film

Thin films of AlW alloys were prepared by co-deposition of pure aluminium and pure tungsten, each sputtered by an independently controlled magnetron source. The deposition rate at the substrate (glass, fused quartz, and alumina ceramic), positioned 5 cm away from the target surface was 0.1-0.2 nm/s for pure metals, and the final film thickness was a few micrometers. Completely amorphous films were obtained in the Al(80)W(20)-Al(67)W(33) composition range. At higher tungsten content, the W(Al) solid solution and pure tungsten phases appeared. The amorphous alloys exhibited a high negative temperature coefficient of the electric resistivity, increasing with the aluminium content up to -5.5 x (10 exp -4) /K. Finally, the amorphous AlW alloys exhibited a remarkable microhardness (6-7 GPa), and are structurally stable up to at least 400 oC.

amorphous thin films; Al-W alloys; magnetron sputtering technique; electric resistivity and microhardness changes

nije evidentirano