engleski

The a-Si:h p-i-n color detector Response Time on Modulated Illumination

In this paper is presented a study of the visible light detection by the amorphous silicon p-i-n- sensor under low reverse bias, where linear increase of photocurrent under different illumination condition is observed. The method based on the material intrinsic wavelength-filtering properties is implemented in color sensing. The response times after switching on and off monochromatic and chromatic illumination at constant reverse bias voltage are analyzed. The results of transient response under different illumination conditions confirm the trap controlled conduction mechanism.

amorhous silicon; photodetectors; p-i-n photodiode; transient response

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