engleski

Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base

The extrinsic base in LBTs influences high frequency performance by decreasing the effective collector cross-section, increasing collector current density and increasing the effective transit time through the base – collector depletion region. These effects are examined on structure with laterally contacted base. Influence of the technological parameters, such as extrinsic base width, emitter width and link-base length, on fT and fmax are examined and optimization and scaling scheme for this structure is proposed. This work shows that link-base region should not be scaled down as much as possible, since fT is sacrificed to obtain higher fmax.

lateral bipolar transistor ; extrinsic base effect

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