engleski

MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

The upgrade of the MALTA DMAPS designed in Tower 180 nm CMOS Imaging process will implement the numerous modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1x10^15 Mev neq/cm^2. The effectiveness of these changes have been demonstrated in recent measurements with a small-scale Mini-MALTA demonstrator chip. Multiple changes in the digital periphery are proposed: The asynchronous address generator will be revised to provide more control over the pulse length. The Synchronization memory will be upgraded with the goal of achieving a sub-nanosecond timing resolution. Serial chip to chip data transfer will be prototyped, in order to gauge the plausibility of implementation on a future full sized chip. Apart from these changes, research of the overall sensor architecture will be discussed as well.

Monolithic active pixel sensors ; Silicon detectors ; Radiation hard electronics

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