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The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs


Pavlović, Mladen; Šantić, Branko; Desnica-Franković, Dunja Ida; Radić, Nikola; Šmuc, Tomislav; Desnica, Uroš V.
The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs // Journal of electronic materials, 32 (2003), 10; 1100-1106 doi:10.1007/s11664-003-0094-2 (međunarodna recenzija, članak, znanstveni)


Naslov
The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs

Autori
Pavlović, Mladen ; Šantić, Branko ; Desnica-Franković, Dunja Ida ; Radić, Nikola ; Šmuc, Tomislav ; Desnica, Uroš V.

Izvornik
Journal of electronic materials (0361-5235) 32 (2003), 10; 1100-1106

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Photocurrent transients ; deep levels/traps ; semi-insulating GaAs

Sažetak
Photocurrent transients, IPC(t), were studied in semi-insulating GaAs during low-T illumination . Unusual transients, were explained by the model, relating IPC(t) to the deep levels/traps and their occupancy. Such traps were actually detected and characterized by independent measurements of thermally stimulated currents (TSC). Processes of generation, recombination and capture were described by set of coupled differential equations and solved numerically. IPC(t), calculated without any free parameter, well reproduced (through eight orders of magnitude) the experimental transients over the wide range of photon energies and intensities. Best-fit parameters agreed well with those determined from TSC measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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