engleski

The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs

Photocurrent transients, IPC(t), were studied in semi-insulating GaAs during low-T illumination . Unusual transients, were explained by the model, relating IPC(t) to the deep levels/traps and their occupancy. Such traps were actually detected and characterized by independent measurements of thermally stimulated currents (TSC). Processes of generation, recombination and capture were described by set of coupled differential equations and solved numerically. IPC(t), calculated without any free parameter, well reproduced (through eight orders of magnitude) the experimental transients over the wide range of photon energies and intensities. Best-fit parameters agreed well with those determined from TSC measurements.

photocurrent transients ; deep levels/traps ; semi-insulating GaAs

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