engleski

Ge quantuum wires in alumina matrix for enhanced photoelectric conversion

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photo-sensitive devices. The films were prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and alumina. We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photogeneration is the consequence of the produced multiple exciton generation in the films and of their specific structure consisting of the interconnected Ge quantum wires that enable efficient transport of carriers.The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values that are equal to multiple values of the thin film band gap.

Ge QWs ; solar cells ; thin films ; GISAXS ; multiple exciton generation

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